GEISHA Semiconductor Reliability Studies. A Portion of CHAIR-GEISHA.
Final rept. 1 Feb 70-31 Dec 71,
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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The final report describes studies relating to silicon junction diodes to be used for amplifying the current in an electron beam via electron-hole pair production in silicon. Radiation damage effects on the junction reverse leakage are treated in terms of insulator charging effects. Electrical comparisons of shallow diffused and ion implanted junctions are given. Contributions to the thermal impedance of a device of the silicon, gold and beryllia component regions are assessed. Technology is described for producing targets with linear arrays of diodes from a monolithic string of elements formed in silicon. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products