Accession Number:

AD0776913

Title:

Study of Transient Radiation Effects on a Monolithic Integrated Operational Amplifier Circuit.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

• Schauer,H.
• Hudson,P.

Report Date:

1974-03-01

Pagination or Media Count:

32.0

Abstract:

The microAmp 776 micropower operational amplifier was irradiated in Cobalt-60, linear accelerator and fast burst reactor environments. The rest procedures used, the test results obtained, and an analysis of the radition induced failures are presented. Offset voltage increased 25 at 5600 rads Si Co60 exposure and up to 400 at 1 X 10 to the 5th power rads Si linac exposure. Open loop gain was degraded up to 70 at 6 X 10 to the 4th power rads Si. Offset voltage approximately doubled at 4 X 10 to the 11th power ncm E or 10 keV, which is more significant at lower set currents where offset voltages are initially higher. Open loop gain decreased by up to 80 at 5 X 10 to the 11th power nsq cm, largely due to decreased transistor current gain and partly due to a 30 reduction in quiescent current. Author

Descriptors:

• *Power amplifiers
• *Integrated circuits
• *Transient radiation effects
• Failure(Electronics)
• Neutron reactions
• Gamma rays
• Test methods

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE