Accession Number:

AD0775895

Title:

Preparation and Properties of PbS-Si Heterojunctions for Infrared Charge Coupled Imaging.

Descriptive Note:

Final rept. May 72-Nov 73,

Corporate Author:

NAVAL ORDNANCE LAB WHITE OAK MD

Report Date:

1974-01-07

Pagination or Media Count:

24.0

Abstract:

Narrow bandgap-silicon heterojunctions are examined theoretically and experimentally to assess the feasibility of extending charge coupled devices CCD imaging to the infrared. Ultra-high vacuum deposition of PbS on silicon is made using both direct sublimation and hot-wall film growth techniques. Substrate preparation in vacuum is discussed and the dependence of film properties on growth parameters is presented. Measurements of I-V, C-V and photoresponse characteristics of the PbS-Si heterojunctions are presented. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE