Preparation and Properties of PbS-Si Heterojunctions for Infrared Charge Coupled Imaging.
Final rept. May 72-Nov 73,
NAVAL ORDNANCE LAB WHITE OAK MD
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Narrow bandgap-silicon heterojunctions are examined theoretically and experimentally to assess the feasibility of extending charge coupled devices CCD imaging to the infrared. Ultra-high vacuum deposition of PbS on silicon is made using both direct sublimation and hot-wall film growth techniques. Substrate preparation in vacuum is discussed and the dependence of film properties on growth parameters is presented. Measurements of I-V, C-V and photoresponse characteristics of the PbS-Si heterojunctions are presented. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors