Conduction Mechanisms in Thick Film Microcircuits
Semi-annual technical rept. 1 Jul-31 Dec 1973
PURDUE RESEARCH FOUNDATION LAFAYETTE IN
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The primary thrust of the experimental program is to relate electrical properties of the thick films to the materials properties and processing conditions through microstructure. The materials properties to be correlated are resistivity, temperature coefficient of resistivity, coefficient of thermal expansion, interfacial energy, particle shape, size and size distribution, and chemical reactivity with other constituents. The processing conditions to be correlated are time, temperature and atmosphere during firing. The specific objectives of the program are to determine the dominant sintering mechanisms responsible for microstructure development and establish the relative importance of the various properties of the ingredient materials, determine the dominant mechanisms limiting electrical charge transport, and establish the relative importance of the various properties of the ingredient materials, and develop phenomenological models to interrelate the various materials properties with systems performance.
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