Aluminum-Oxide Passivation of Electron-Beam-Semiconductor Silicon and Gallium-Arsenide Diodes.
Final rept. 1 Aug 72-30 Nov 73,
RCA LABS PRINCETON N J
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Beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80 to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated silicon pn-junction at a current gain of 2200, a beam voltage of 12 kV, and power and current densities of 42 W and 0.82 Asq. mm, respectively. A life of 770 hours has been accumulated on a gallium-arsenide Schottky-barrier diode at a current gain of 2000, a beam voltage of 12.8 kV, power and current densities of 20 W and 0.48 Asq. mm, respectively. The active diameter of each target was 0.012 inch. Author
- Electrical and Electronic Equipment