Accession Number:

AD0775473

Title:

Luminescent Material Preparation and Spectroscopy.

Descriptive Note:

Final rept. 1 Jul 70-30 Sep 73,

Corporate Author:

OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS

Personal Author(s):

Report Date:

1973-12-20

Pagination or Media Count:

31.0

Abstract:

Phosphorus ion implanted CdS was analyzed using C-V, I-V, thermally stimulated current and photovoltaic measurements. Properly annealed diodes were shown to have a p-i-n structure. A low voltage blue electroluminescence was observed at 77K in ion implantation fabricated p-n junction diodes. A channeling effect was observed by analysis of C-V data. Many shallow energy levels were identified, some of which have been previously reported and some of which are new to this work. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE