Luminescent Material Preparation and Spectroscopy.
Final rept. 1 Jul 70-30 Sep 73,
OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS
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Phosphorus ion implanted CdS was analyzed using C-V, I-V, thermally stimulated current and photovoltaic measurements. Properly annealed diodes were shown to have a p-i-n structure. A low voltage blue electroluminescence was observed at 77K in ion implantation fabricated p-n junction diodes. A channeling effect was observed by analysis of C-V data. Many shallow energy levels were identified, some of which have been previously reported and some of which are new to this work. Author
- Electrooptical and Optoelectronic Devices
- Solid State Physics