Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe,
INTELCOM RAD TECH SAN DIEGO CALIF
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The report describes the results of experimental and theoretical investigation of the effects of electron irradiation on the electrical and optical properties of the alloy semiconductor HgCdTe. These results include measurements of the carrier concentration, Hall mobility, carrier lifetime, and photoconductive response for the preirradiation conditions, as a function of electron fluence and as a function of annealing temperature. The electron irradiations of these samples were performed at 80K with 5-MeV electrons and at annealing temperatures up to 350K. A model is developed to explain the changes in mobility, carrier concentration, and photoconductive response.
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics