Radiation Tolerance of GaAs Broadband Amplifier.
Final rept. 1 Apr-30 Sep 73,
MCDONNELL DOUGLAS ASTRONAUTICS CO HUNTINGTON BEACH CALIF
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The response and degradation characteristics of microstripline GaAs junction field-effect transistor integrated microwave amplifiers were investigated in radiation environments. Permanent changes in electrical performance due to fluences of 5x 10 to the 14th power and 1x 10 to the 15th power neutronssq cm E 10 KeV are reported and discussed. Experimental results are compared with theoretical predictions of device transconductance changes, which have been established and verified prior to this investigation. Modified author abstract
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products