Accession Number:

AD0775319

Title:

Monte Carlo Calculations of Dose Distribution in SEM Irradiated Semiconductor Structures.

Descriptive Note:

Final rept. 18 May-18 Oct 73,

Corporate Author:

SCIENCE APPLICATIONS INC ARLINGTON VA

Personal Author(s):

Report Date:

1973-10-18

Pagination or Media Count:

27.0

Abstract:

Monte Carlo calculations were performed to determine the two-dimensional dose distribution in a metaloxidesilicon substrate structure irradiated by the electron beam from a scanning electron microscope SEM. The objective was to investigate energy deposition in transistors neighboring an MOS capacitor test pattern irradiated by a SEM electron beam. The principal conclusion is that no damage to neighboring transistors is predicted - the dose in the oxide layer 2 microns from the boundary of the test pattern is four orders of magnitude smaller than the soe dose in the test pattern oxide for a 20 keV beam. Plots and tables of depth dose distribution, radial dose distribution, dose distribution near a rectangular target pattern, charge deposition distribution, and radial distribution of reflected charge are presented. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE