Monte Carlo Calculations of Dose Distribution in SEM Irradiated Semiconductor Structures.
Final rept. 18 May-18 Oct 73,
SCIENCE APPLICATIONS INC ARLINGTON VA
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Monte Carlo calculations were performed to determine the two-dimensional dose distribution in a metaloxidesilicon substrate structure irradiated by the electron beam from a scanning electron microscope SEM. The objective was to investigate energy deposition in transistors neighboring an MOS capacitor test pattern irradiated by a SEM electron beam. The principal conclusion is that no damage to neighboring transistors is predicted - the dose in the oxide layer 2 microns from the boundary of the test pattern is four orders of magnitude smaller than the soe dose in the test pattern oxide for a 20 keV beam. Plots and tables of depth dose distribution, radial dose distribution, dose distribution near a rectangular target pattern, charge deposition distribution, and radial distribution of reflected charge are presented. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics