Absorption Losses in Epitaxial PbTe Films for Potential Integrated Optics Application
Final technical rept. 1 Oct-31 Dec 1973
FORD MOTOR CO DEARBORN MI RESEARCH STAFF
Pagination or Media Count:
Optical absorption measurements at 300 K and 77K in the 2.5-12 micrometer range are presented for epitaxial PbTe films grown on BaF2 substrates. Effects due to carrier concentrations, growth conditions, and possible impurities are discussed. In high carrier concentration films p or 10 to the 18th powercc the absorption is free-carrier limited, while in low p material the absorption appears to be impurity limited. The impurity limited absorption, which shows wide variations between samples, correlates with the observation of Cl in the ion back-scattering spectra. The lowest observed 10 micrometer loss is 16cm. A threshold analysis on PbTe diode lasers made with annealed samples indicates the threshold gain is 10-20cm, about a factor of 10 below that obtained in similar laser in unannealed films.
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- Solid State Physics