Accession Number:

AD0775000

Title:

Absorption Losses in Epitaxial PbTe Films for Potential Integrated Optics Application

Descriptive Note:

Final technical rept. 1 Oct-31 Dec 1973

Corporate Author:

FORD MOTOR CO DEARBORN MI RESEARCH STAFF

Report Date:

1974-02-01

Pagination or Media Count:

55.0

Abstract:

Optical absorption measurements at 300 K and 77K in the 2.5-12 micrometer range are presented for epitaxial PbTe films grown on BaF2 substrates. Effects due to carrier concentrations, growth conditions, and possible impurities are discussed. In high carrier concentration films p or 10 to the 18th powercc the absorption is free-carrier limited, while in low p material the absorption appears to be impurity limited. The impurity limited absorption, which shows wide variations between samples, correlates with the observation of Cl in the ion back-scattering spectra. The lowest observed 10 micrometer loss is 16cm. A threshold analysis on PbTe diode lasers made with annealed samples indicates the threshold gain is 10-20cm, about a factor of 10 below that obtained in similar laser in unannealed films.

Subject Categories:

  • Electrical and Electronic Equipment
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE