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Ion Implantation of Semiconductors, Metals and Alloys.
Interim rept. no. 7, 1 Sep 71-31 Aug 73.
SALFORD UNIV (ENGLAND DEPT OF ELECTRICAL ENGINEERING
Pagination or Media Count:
The effect of heavy ion implantation of GaAs, GaP, CdS and Al2O3 has been investigated using electron microscopy and Rutherford backscattering based on channelling. The variation of damage with ion dose, the annealing behaviour of implanted material and the lattice location of the foreign implants have been investigated. Author
APPROVED FOR PUBLIC RELEASE