Accession Number:

AD0774654

Title:

Ion Implantation of Semiconductors, Metals and Alloys.

Descriptive Note:

Interim rept. no. 7, 1 Sep 71-31 Aug 73.

Corporate Author:

SALFORD UNIV (ENGLAND DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Carter,G.
• Grant,W. A.

Report Date:

1973-08-31

Pagination or Media Count:

23.0

Abstract:

The effect of heavy ion implantation of GaAs, GaP, CdS and Al2O3 has been investigated using electron microscopy and Rutherford backscattering based on channelling. The variation of damage with ion dose, the annealing behaviour of implanted material and the lattice location of the foreign implants have been investigated. Author

Descriptors:

• *GALLIUM ARSENIDES
• *GALLIUM PHOSPHIDES
• *CADMIUM SULFIDES
• *ALUMINATES
• *ION IMPLANTATION
• SEMICONDUCTORS
• RADIATION EFFECTS
• SINGLE CRYSTALS
• DOPING
• TELLURIUM
• BISMUTH
• KRYPTON
• XENON
• BACKSCATTERING
• ANNEALING
• UNITED KINGDOM

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE