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Microwave Solid-State Device and Circuit Studies.
Quarterly progress rept. no. 11, 1 Mar-1 June 73,
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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TUDIES.Quarterly progress rept. no. 11, 1 Mar-1 June 73,11Haddad,G. I. 037250-11F30602-71-C-0099AF-5573, ORA-037250557303RADCTR-73-351See also report dated Jun 73, AD-766 769.Semiconductor devices, Integrated circuits, Microwave equipment, Microwave amplifiers, Microwave oscillators, Generators, Avalanche diodes, Gunn diodes, IMPATT diodes, Field effect transistors, Manufacturing methods, Gallium arsenidesTRAPATT diodesThis is the eleventh quarterly progress report on subject contract whose objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification, and control. Current tasks under this program are Modulation properties of Gunn-Effect Devices properties of IMPATT Diodes High-efficiency Avalanche Diodes properties of TRAPATT Diodes Field-effect Transistors Solid-state Device Fabrication. Author
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