Accession Number:

AD0774159

Title:

A Radiation Effects Research Program.

Descriptive Note:

Final rept. 1 Sep 67-31 Aug 73,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Grannemann,W. W.
• Boatwright,L. T.
• Byatt,W. J.
• Colclaser,R. A.
• Southward,H. D.

Report Date:

1973-10-01

Pagination or Media Count:

76.0

Abstract:

Radiation effects research at The University of New Mexico has been directed toward basic research objectives involving dielectric materials and semiconductor materials. Processing of dielectric materials and semiconductor materials has been related to radiation effects. Secondary objectives included radiation effects on solid-state devices and circuits.

Descriptors:

• *SEMICONDUCTORS
• *RADIATION EFFECTS
• TRANSISTORS
• RADIATION HARDENING
• PHOTOELECTRICITY
• WAVE FUNCTIONS
• METAL OXIDE SEMICONDUCTORS
• BAND THEORY OF SOLIDS
• SILICON
• GALLIUM ARSENIDES
• SEMICONDUCTOR DIODES
• SCHOTTKY BARRIER DEVICES
• IONIZING RADIATION
• GALLIUM PHOSPHIDES
• SEMICONDUCTING FILMS
• INDIUM
• ELECTRON IRRADIATION
• TITANIUM OXIDES
• ALUMINATES
• TEST EQUIPMENT

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE