Properties of Transistors during Continuous Operation and Storage,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The report discusses properties of semiconductor diodes and transistors during their continuous operation and storage. Descriptions are given of basic reasons for the failures of instruments connected with phenomena on the surface of crystals, the breakdown of junctions, and the destruction of contacts. Mathematical models of the processes of failures are given. Technical specifications are stated for the quality and reliability of instruments, the methods of checking them, and test evaluation. Information is given about accelerated tests and indestructible quality control. The experimental dependences of the failure rate and change in parameter values of instruments on time and load are given. Recommendations are given regarding the design of reliable equipment on diodes and transistors.
- Electrical and Electronic Equipment