Accession Number:

AD0773647

Title:

Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy

Descriptive Note:

Semiannual technical rept. no. 3

Corporate Author:

JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB

Personal Author(s):

Report Date:

1973-11-30

Pagination or Media Count:

16.0

Abstract:

Comparison of the 125Te Mossbauer spectra in amorphous and crystalline Te films indicates that in the amorphous phase the quadrupole splitting is about 20 greater and the recoil-free fraction about one-third as great as in the crystalline phase. The increase in quadrupole splitting is interpreted as indicating a decrease of about 3 in the length of the covalent bond between the nearest neighbor Te atoms in the amorphous state. The decrease in recoil-free fraction in the amorphous film is explained as due to dangling bonds at the ends of the Te chains which are responsible for a change in the density of phonon states in the system. A short paper covering this work has been prepared and is included as an Appendix to this report.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE