Design, Fabrication, and Evaluation of an Electron Beam Addressable High Information Density Memory Tube.
Quarterly progress rept. no. 6, 1 May-31 Jul 73,
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y
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TE RESEARCH AND DEVELOPMENT SCHENECTADY N YDesign, Fabrication, and Evaluation of an Electron Beam Addressable High Information Density Memory Tube.Quarterly progress rept. no. 6, 1 May-31 Jul 73,6Fisher,James K. SRD-73-115DAAB07-72-C-0098DA-1-H-631024-D-2521-H-631024-D-25203ECOM0098-6See also report dated Jun 73, AD-763 220.Memory devices, Storage tubes, Random access computer storage, Electron optics, Electron lenses, Electron guns, ReliabilityElectronics, FabricationBORAMBlock Oriented Random Access Memories, Block oriented random access memories, DesignTests were made on a memory tube BEAMOS Tube No. 5 containing tantalum anode apertures. Read-write tests were conducted for recording rates as high as 10 megabits per second. Preliminary testing of BEAMOS Tube No. 7 indicates a capability of 5.6 micrometer bit spacing at the 10 M bit record-read rate. Components and an improved memory tube were ordered and the tube redesign was completed. Modified author abstract
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