Accession Number:

AD0773425

Title:

Chemical Vapor Deposition of Titanium Dioxide Film in Microelectronics,

Descriptive Note:

Corporate Author:

MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Hsuch,Y. W.
• Lin,H. C.

Report Date:

1972-10-01

Pagination or Media Count:

5.0

Abstract:

With high dielectric constant, titanium dioxide has been used for making a capacitor and field effect transistor in conjunction with silicon dioxide. High transconductance and low threshold voltage were observed.

Descriptors:

• *Titanium oxides
• *Thin films
• *Vapor deposition
• Microelectronics
• Field effect transistors
• Manufacturing

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE