Accession Number:

AD0773301

Title:

Studies of Silicon Extrinsic Detectors,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA SOLID STATE ELECTRONICS LAB

Personal Author(s):

Report Date:

1973-11-28

Pagination or Media Count:

39.0

Abstract:

Theoretical analyses of the effects of ion position correlation on the electron mobility in n-type silicon are compared with experiments. Steady-state and transient extrinsic photoconductivity are analyzed including the presence of recombination centers. Theoretical analyses are made of the photoionization cross-section of impurity for Coulomb and spherical square wells and compared with experimental data of shallow acceptors in silicon. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE