Accession Number:

AD0773296

Title:

V Groove M.O.S. Transistor Technology,

Descriptive Note:

Corporate Author:

TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1973-08-21

Pagination or Media Count:

3.0

Abstract:

An metal oxide semiconductor transistor structure in which the channel is defined by preferential etching of the silicon is described. The fabrication technology involves either a 3- or 4-mask process, and results in very-short-channel devices, using noncritical alignment tolerances. Experimental results obtained on the fabricated devices are presented, and possible uses of the technology are described. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE