Investigation of Transient Processes in Transistors during the Pulsed Action of Penetrating Radiation,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Pagination or Media Count:
Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products