Conduction Changes in GUNN Devices under the Influence of 10.6 and 0.6328 micrometer Fluxes.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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-A-44003Gunn diodes, Semiconductor devices, Gallium arsenides, Photoconductivity, Optical detectors, Infrared detectors, Gunn effect, Photodetectors, Carbon dioxide lasers, Helium neon lasers, Radiation effectsThe room temperature response conductance of GaAs material in a GUNN device structure under the influence of 10.6 micrometer and 0.6328 micrometer irradiation was investigated. Both continuous wave and pulsed irradiations were used in making measurements on devices placed in dc and 60 Hz dynamic test circuits. Negative and positive conductance changes were determined from the CO2 and HeNe fluxes, respectively. The responsivity of the GUNN device under CO2 irradiation was calculated to be 0.023 AW. Negative conductance change was attributed to thermal heating whereas the positive change was interpreted as resulting from carrier generation photoconductive effect. Author
- Electrical and Electronic Equipment
- Solid State Physics