Accession Number:

AD0772642

Title:

Feasibility of Silicon Carbide High Frequency, High Power Devices.

Descriptive Note:

Final rept. Oct 72-Jun 73,

Corporate Author:

WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA ASTRONUCLEAR LAB

Report Date:

1973-07-01

Pagination or Media Count:

38.0

Abstract:

Several material parameters of SiC were examined and figures of merit calculated to show the potential of SiC as a high frequency, high power device material. Schottky barrier diodes were prepared on n-type SiC by sputtering on a gold layer. The barrier voltage, measured by three techniques, was found to be 1.40 plus or minus 0.05 eV. An initial study was made on ion implanted layers N2 into p-type SiC but usuable diodes were not obtained. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE