Feasibility of Silicon Carbide High Frequency, High Power Devices.
Final rept. Oct 72-Jun 73,
WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA ASTRONUCLEAR LAB
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Several material parameters of SiC were examined and figures of merit calculated to show the potential of SiC as a high frequency, high power device material. Schottky barrier diodes were prepared on n-type SiC by sputtering on a gold layer. The barrier voltage, measured by three techniques, was found to be 1.40 plus or minus 0.05 eV. An initial study was made on ion implanted layers N2 into p-type SiC but usuable diodes were not obtained. Author
- Electrical and Electronic Equipment
- Solid State Physics