Accession Number:

AD0772546

Title:

The Effects of Ionizing Radiation on Gallium Arsenide Phosphide Metal-Insulator-Semiconductor Structures,

Descriptive Note:

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1973-08-01

Pagination or Media Count:

109.0

Abstract:

MIS capacitors were fabricated on n-type GaAs0.5P0.5 using a thermally grown chromium-doped insulator and chromium gate electrode. The fabrication procedures which lead to stable devices are described. The devices were exposed to both Co60 gamma rays and high-energy electrons. A qualitative model which relies on carrier injection and trapping in the GaAsP disordered region is proposed to explain the observed radiation-induced space charge buildup in the capacitors. Radiation-induced increases in the fast interface-state density were generally less than 15 percent of the pre-irradiation values and were found to be independent of radiation type and dose, as well as the gate bias applied during irradiation. Thermal annealing experiments show that the radiation-induced charge can be completely annealed at a temperature of 150C, independent of the gate bias applied during annealing. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE