Thin Film Display Switches.
Final rept. 1 Apr 71-31 May 73,
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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A thin film transistor analog of an MNOS memory device was proposed as a grey level storage element for a solid state X-Y addressed display panel. Work was performed on sputtered Si3N4 layers in combination with thermal SiO2 on silicon and sputtered SiO2 on CdS films, and memory behavior was observed, flat band voltage shifts of 5V being obtained with gate pulses of plus or minus 35V. A new system was constructed to allow fabrication in a single pumpdown cycle. A modified device using CdSe, SiO2 and Al2O3, with a floating metal gate, was designed and fabricated in the new system. An X-Y addressible matrix of memory and switching transistors was designed, intended to control an ac EL phosphor layer deposited directly on top of the thin film matrix. Individual memory devices were shown to be able to control the brightness of associated EL phosphor elements. The thin film layout of the matrix was completed and masks were designed. Modified author abstract
- Electrooptical and Optoelectronic Devices
- Computer Hardware