Accession Number:

AD0772529

Title:

Development of a Wideband Low-Noise L-Band Transistor Amplifier.

Descriptive Note:

Final rept.,

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s):

Report Date:

1973-12-01

Pagination or Media Count:

42.0

Abstract:

At microwave frequencies, the recently developed small signal arsenic-diffused-emitter transistors offer high gain, reasonable compression levels, and low noise figure at low-bias levels. These characteristics make them attractive for use in low-noise preamplifiers in RF front ends of a multiport phased-array radar receiver. This report describes the development of a two-stage common-emitter amplifier, operating between 800 and 1400 MHz, using conventional microstrip techniques having a spot noise figure less than 4.00 dB, at a gain of 26.5 dB. Computer-aided design routines were used to obtain final designs from transistor S-parameters. Noise figure and stability criteria are discussed. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE