Accession Number:

AD0772503

Title:

Synthesis of Compound Semiconducting Materials and Device Applications; Gallium Nitride Light Emitting Diodes

Descriptive Note:

Special technical rept.

Corporate Author:

STANFORD UNIV CA CENTER FOR MATERIALS RESEARCH

Personal Author(s):

Report Date:

1973-12-01

Pagination or Media Count:

216.0

Abstract:

The synthesis and characterization of hetero-epitaxial gallium nitride GaN films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light- emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE