Accession Number:

AD0772466

Title:

Determination of the Lifetime from Thermal Generation and Optical Injection in a Pulsed MOS Capacitor,

Descriptive Note:

Corporate Author:

TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1973-03-06

Pagination or Media Count:

18.0

Abstract:

The transient recovery of the high-frequency capacitance of a deeply depleted MOS capacitor initially biased in the inversion region is analysed using a generation-recombination model which assumes a dominant discrete trap in the bulk and a uniform density of traps distributed in energy at the surface. This model enables the semiconductor to be characterized in terms of its minority carrier recombination lifetime in the neutral bulk, its dominant bulk trap energy and its surface recombination velocity at flat-band conditions, all of which are time-independent parameters. The analysis is then used to extract these parameters from capacitance against time recovery curves measured on experimental silicon MOS structures. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE