Accession Number:

AD0772101

Title:

Aluminum Oxide Passivation of Electron-Beam Semiconductor Silicon Diodes.

Descriptive Note:

Interim technical rept.,

Corporate Author:

RCA LABS PRINCETON N J

Report Date:

1973-11-01

Pagination or Media Count:

40.0

Abstract:

DC and rf measurements have shown that beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80 to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated target at a current gain of 2200, a beam voltage of 12 kilovolts, power and current densities of 41.5 watts and 0.82 amperes per sq. mm, respectively, on a 0.012-inch active diameter. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE