Aluminum Oxide Passivation of Electron-Beam Semiconductor Silicon Diodes.
Interim technical rept.,
RCA LABS PRINCETON N J
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DC and rf measurements have shown that beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80 to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated target at a current gain of 2200, a beam voltage of 12 kilovolts, power and current densities of 41.5 watts and 0.82 amperes per sq. mm, respectively, on a 0.012-inch active diameter. Author
- Electrical and Electronic Equipment