Accession Number:

AD0772014

Title:

Use of Photostimulated Luminescence for Studying the Characteristics of Radiation-Induced Electron Centers,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1973-12-18

Pagination or Media Count:

9.0

Abstract:

The kinetics of recombination processes in a solid body depends in great measure on the probability of repeated localizations RL of the charge carriers in pre-radiation and radiation induced microdefects. Repeated localizations can determine in a broad time range, buildup and luminescence attenuation rates. This is extremely important in an applied relationship. Existing methods for studying RL are not always effective. The article proposes a method which permits determination of RL probability and calculation of the amount of thermal ionization energy epsilon and frequency factor P sub 0 for centers in which secondary electron captures occur.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE