Use of Photostimulated Luminescence for Studying the Characteristics of Radiation-Induced Electron Centers,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The kinetics of recombination processes in a solid body depends in great measure on the probability of repeated localizations RL of the charge carriers in pre-radiation and radiation induced microdefects. Repeated localizations can determine in a broad time range, buildup and luminescence attenuation rates. This is extremely important in an applied relationship. Existing methods for studying RL are not always effective. The article proposes a method which permits determination of RL probability and calculation of the amount of thermal ionization energy epsilon and frequency factor P sub 0 for centers in which secondary electron captures occur.
- Solid State Physics