Accession Number:

AD0770780

Title:

Electrical, Optical, Magnetic Resonance and Microhardness Properties of Tungsten-doped VO2,

Descriptive Note:

Corporate Author:

QUEEN'S UNIV KINGSTON (ONTARIO) DEPT OF PHYSICS

Report Date:

1972-01-01

Pagination or Media Count:

8.0

Abstract:

Pure and W-doped single crystals of VO2 have been prepared by isothermal flux evaporation. Electrical, optical, nuclear magnetic resonance and microhardness techniques have been used to characterize the crystal above and below the semiconductor to metal transition. The results of these experiments and the effect of tungsten impurities on the transition temperature are discussed. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE