Accession Number:

AD0770655

Title:

The Effects of Gamma Radiation on the Current Instabilities Caused by Recombination Centers in n-GaAs Crystals,

Descriptive Note:

Corporate Author:

MANITOBA UNIV WINNIPEG MATERIALS RESEARCH LAB

Personal Author(s):

Report Date:

1972-01-01

Pagination or Media Count:

3.0

Abstract:

An investigation was carried out to study the effects of gamma radiation on the current instabilities in oxygen-doped n-GaAs crystals. The crystal samples used for this investigation were n-type GaAs slices of 111 orientation containing 10 to the 11th power oxygen atomscc and having a resistivity of 7800 ohm-cm, supplied from Monsanto Company.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE