The Effects of Gamma Radiation on the Current Instabilities Caused by Recombination Centers in n-GaAs Crystals,
MANITOBA UNIV WINNIPEG MATERIALS RESEARCH LAB
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An investigation was carried out to study the effects of gamma radiation on the current instabilities in oxygen-doped n-GaAs crystals. The crystal samples used for this investigation were n-type GaAs slices of 111 orientation containing 10 to the 11th power oxygen atomscc and having a resistivity of 7800 ohm-cm, supplied from Monsanto Company.
- Solid State Physics