Accession Number:

AD0770054

Title:

Comments on DC Conductivity in Amorphous Semiconductors,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV RIVERSIDE DEPT OF PHYSICS

Personal Author(s):

• Pollak,M.
• Halperin,B. I.

Report Date:

1973-01-01

Pagination or Media Count:

11.0

Abstract:

A recent paper argued that the electrical conductivity arising from thermal hopping between localized states obeys the law ln sigma is proportional to minus T sub zeroT to the 13 power, at low temperatures. That result is found to be based on several unjustified assumptions, however, and the correct temperature dependence is ln sigma is proportional to minus T sub zeroT to the 14 power, as originally proposed by Mott. Author

Descriptors:

• (*Semiconductors
• Electrical conductivity)
• Amorphous materials
• Mathematical models
• Direct current

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE