Accession Number:

AD0770009

Title:

IR Window Studies

Descriptive Note:

Quarterly technical rept. no. 4

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Report Date:

1973-06-15

Pagination or Media Count:

67.0

Abstract:

Continuing wavelength dependent absorption measurements of high purity GaAs grown from the melt by a variety of techniques show remarkably similar structure in all samples. Preliminary measurements of the dielectric constant of GaAs have been obtained. A systematic study of diffuse intensity streaks in the electron diffraction pattern of GaAs single crystals indicates that they are of thermal origin, and do not arise from inclusions or impurities. The absorption coefficient of a good quality sample of GaAs has been reduced to that of best quality samples by annealing. Experiments on self diffusion of Cd and Te, and high temperature Hall effect in CdTe and In-doped CdTe have been completed. Modified author abstract

Subject Categories:

  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE