The Traveling Space Charge Wave GaAs Amplifier.
Final rept. 6 Apr 72-5 Apr 73,
STANFORD UNIV CALIF MICROWAVE LAB
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RS OSCILLATED BECAUSE THE SEMICONDUCTOR LAYER WAS TOO THICK. A new design with Schottky-barrier input and output gates was made, however, no useful experimental results were obtained because of the difficulties in obtaining the necessary high quality material. A new theoretical analysis to predict the input and output impedances of the device was carried out. The conclusion is that it is possible to make a low noise amplifier by operating the input region in the positive differential mobility range. By using a Schottky-barrier at the input, it is possible to control the dc field distribution along the device, and to work with an input impedance in the order of 50 ohms. The output efficiency will be poor unless the devices are made very short with a large gain per unit length, and a short output gap less than half a wavelength long at the saturation velocity of the carriers. Author
- Electrical and Electronic Equipment