Accession Number:

AD0768968

Title:

The Physics of Interface Interactions Related to Reliability of Future Electronic Devices

Descriptive Note:

Semi-annual technical rept. no. 1

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1973-01-31

Pagination or Media Count:

137.0

Abstract:

Photoemission and thermionic emission results show that the Si-SiO2 energy barrier can be reduced from 4.2 eV to about 2.5 eV by a monolayer coverage of sodium. Scanning Internal Photoemission maps were made of the SiO2 interface which was stained by a small amount of sodium. Images of the contract barrier were made which show microscopic imperfections such as phosphorus precipitates on the interface as well as microscratches. In the area of transition metal oxides, progress was made in understanding the mechanism of switching found in thin films of Nb2O5. In another area, involving structural instabilities of thin glass films, it was identified that a small phosphorus impurity is able to recrystallize SiO2 at the relatively low temperature of 525C. Phosphorus is commonly used to dope the SiO2 used in MOS transistors. Also, a destructive interface reaction between SiO2 and vanadium was found.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE