Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.
Final rept. Dec 70-Dec 72,
CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING
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The report covers three relatively distinct areas of investigations studies of Al2O3 and Si3N4 thin films, reactions in thin solid films and doping by ion implantation. Common to all this work is the use of ion backscattering spectrometry as the principle analytical tool, supported by a number of other techniques. Among these, x-ray diffraction and scanning electron microscopy were found to be particularly well suited to supplement backscattering. Modified author abstract
- Solid State Physics