Molecular Beam Epitaxy of II-VI Compound Waveguides
Quarterly technical rept. 1 Jul-30 Sep 1973
PERKIN-ELMER CORP WILTON CT
Pagination or Media Count:
Optical waveguide growth is being pursued using molecular beam epitaxy, a closely-controlled form of vacuum evaporation, under ultra-high vacuum. Zn and Te2 vapor pressures over the elements and over ZnTe have been measured and correlated with film growth behaviour. Optically-clear, mirror- smooth, monocrystalline, 1 micron thick films of ZnTe have been grown at 1 micronhour on 350C CaF2111 substrates using separate elemental sources of 6- nines pure Zn and Te. Film stoichiometery was insensitive to incident ZnTe flux ratio. Films were polycrystalline at 450C and ceased to deposit at 500C. Films grown from a single 5-nines pure ZnTe source of inferior quality. Single-crystal CdSe0001 substrates have been prepared by BrMeOH polishing and ion bombardment.
- Electrooptical and Optoelectronic Devices
- Solid State Physics