Interface Phenomena in Integrated Circuit Oxides.
Final rept. 30 Jun 70-1 Jan 73,
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
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ON LIMITED MOBILE ION TRANSPORT MODEL WAS PROPOSED. By use of a ramp-voltage technique and C-V measurements after bias-heat stress, it was demonstrated that the number of mobile ions is given by a temperature dependent Boltzman distribution. The ramp-voltage technique is useful in determining total number of ions mobile at a given temperature but is not by itself sufficient to determine the transport properties. It was demonstrated that evaluation of oxide contamination by C-V curve shifts yields a lower than true value if the sample is not kept under positive bias and sweep bias applied only when the sweep voltage approaches closely the flat-band voltage. SiO2 layers were also fabricated by the pyrolitic decomposition of silane gas and the electrical properties as a function of annealing temperatures were studied. Electrical properties of films annealed at 1000C approach closely those of thermal oxides. Recommendations for further oxide studies are given. Author
- Electrical and Electronic Equipment
- Solid State Physics