Accession Number:

AD0768212

Title:

Transient Radiation Effects Research.

Descriptive Note:

Final rept. 3 Apr 72-30 Jun 73,

Corporate Author:

INTELCOM RAD TECH SAN DIEGO CALIF

Report Date:

1973-07-01

Pagination or Media Count:

174.0

Abstract:

BY ELECTRONS OF VARIOUS ENERGIES. The results of optical and electrical studies on GaAs irradiated at room temperature with 1- and 30-MeV electrons, together with postirradiation annealing data, are presented. Electron irradiation of high-purity n- and p-type silicon yielded information on the energy level of the donor and acceptor states of a defect assumed to be the isolated vacancy. The results are presented of investigations to determine the cross sections for capture of holes by negatively charged gold atoms in gold-doped n-type silicon. A study was initiated of the recombination lifetime at low temperature in specially doped silicon used for infrared detector fabrication, and preliminary results are presented. Development of a fast-time-resolution optical absorption apparatus has involved testing of materials for Cerenkov sources. Results of these studies are presented. Charge injection and storage release in two common capacitor materials, Mylar and Teflon, have been studied. The charge storage is dependent on the nature of this interface and, in some cases, on the bias temperature history. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE