Electron Paramagnetic Resonance Study of GaAs Surfaces.
Annual rept. no. 6, 1 Feb 72-31 Jan 73,
NEW SOUTH WALES UNIV KENSINGTON (AUSTRALIA)
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The clean surfaces of GaAs single crystals are of considerable technological importance. When properly covered with cesium and oxygen, they display negative electron affinity, making them efficient photoemitters in the infrared. The general nature of the effect is understood in terms of general parameters such as work function, but not the details at the atomic level. These await a knowledge of the structure and electron properties of clean GaAs 110 surfaces. The present work is aimed at obtaining such an understanding, using electron paramagnetic resonance EPR techniques. The task of obtaining large single crystal cleavage surfaces in ultra high vacuum in the central portion of a microwave cavity, cooling them to low temperatures and obtaining sufficient signal to noise ratio from the relatively small surface area is an exacting one. The work of the last year, has been mainly devoted to developing the experimental techniques necessary to achieve this. Modified author abstract
- Solid State Physics