Accession Number:

AD0767572

Title:

Reaction Kinetics of Pd and Ti-Al Films on Si,

Descriptive Note:

Corporate Author:

CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1973-05-01

Pagination or Media Count:

125.0

Abstract:

The growth of compound phases from thin film layers of Pd and Ti-Al deposited on Si is described in this work. The growth kinetics and composition of the compound phases were measured utilizing 2 MeV 4He backscattering. Crystalline structure and film texture effects of the compounds layers were measured by X-ray diffraction techniques. The Ti-Al metal system is used to make contact to Si in integrated circuit applications. Compound phases in this system can be directly related to severe erosion of metal -Si contact areas which result in failure of the integrated circuits. The rate kinetics are found to have practical application in predicting and controlling a failure mechanism in an integrated circuit metallization scheme. Modified author abstract

Subject Categories:

  • Physical Chemistry
  • Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE