Electroluminescent Diode Switches.
Final rept. 1 Jan-31 Dec 72,
RCA LABS PRINCETON N J
Pagination or Media Count:
GaAs and GaAs1-xPx p-n-p-n Shockley diode structures have been prepared by an epitaxial vapor-phase growth technique. The two-terminal devices exhibit a negative-resistance I-V characteristic, which allows them to be used as an electroluminescent diode with a built-in latching memory capability. The FaAs diodes have breakover voltages between 2 and 3 V at room temperature. After breakdown, they emit near-bandgap infrared radiation with external quantum efficiencies as high as 0.4. The emission spectra have been found to consist of two peaks, one corresponding to recombination in the innermost n-layer, and the other corresponding to recombination in one of the two p-type layers. The emission for the GaAs diodes occurs uniformly over the entire surface area. A 5-by-7 alphanumeric display was fabricated from the GaAs vaporgrown diodes. These devices are addressed by the superposition of positive and negative pulses to the appropriate rows and columns, respectively. The successful generation of a variety of characters by this technique had demonstrated the feasibility of the Shockley diode concept for display applications. Future technological problems associated with such a display are discussed. Modified author abstract
- Electrooptical and Optoelectronic Devices