Yellow Luminescent Diodes.
Final rept. 1 Jan 71-31 Dec 72,
RCA LABS PRINCETON N J
Pagination or Media Count:
The authors review the vapor-phase growth technology used for the preparation of the epitaxial layers, and follow this by a section concerned with alloy homogeneity, one of the more important papameters for the preparation of high-quality in 1-xGaxP. The problems associated with lattice mismatch in epitaxial growth is discussed, the three types of epitaxy-substrate structures prepared are described. The p-n junctions prepared on GaAs substrates are described, and it is shown that very high quality light-emitting diodes can be obtained when an In1-xGaxP alloy composition that has the same lattice constant as the GaAs substrate is used. The growth of In1-x GaxP substrates is treated and the high-resistance problems that were consistently observed for such structures due to a variety of technological complications are described. The results obtained with the three different types of structures are compared, and the features and limitations of each are described. Author
- Electrooptical and Optoelectronic Devices