IR Window Studies
Quarterly technical rept. no. 3
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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During this quarter, additional wavelength dependent calorimetric measurements of IR absorption in very pure GaAs have been made which indicate that a lower level of absorption coefficient is being reached for GaAs grown from the high temperature melt by conventional techniques. Experiments on strain annealing and purification of GaAs have been carried out in an effort to modify its absorption characteristics. The stress-strain properties of GaAs are under continuing investigation. The ultra pure Alkali Halide production facility is now in operation and producing KCl powder as well as single crystals. A new technique for measuring surface absorption has been devised, and preliminary feasibility experiments completed. An important class of sum rules for the frequency moments of the multiphonon contribution to absorption coefficients has been discovered. Progress in other areas of IR window material preparation, characterization and growth is reported.
- Lasers and Masers