Design, Fabrication, and Evaluation of an Electron Beam Addressable High Information Density Memory Tube.
Quarterly progress rept. no. 5, 1 Mar-30 Apr 73,
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y
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IABILITYELECTRONICSBORAMBLOCK ORIENTED RANDOM ACCESS MEMORIES, RANDOM ACCESS COMPUTER STORAGEThe technical objective of this development program is the design fabrication, and evaluation of an experimental model electron beam addressable, high information density memory tube. The tube is to be a sealed-off, self-contained unit consisting of an electron source, the necessary electron optics for performing the required write and read functions, and a storage structure containing approximately 10 million elements. The program is directed towards the development of an economically feasible electron beam addressable, high information density memory tube. This operational tube shall serve as the storage element section of a block-oriented random access memory BORAM. During this reporting period static tests were conducted on two complete memory tubes. Target studies and manufacturing improvements continue. Debugging and testing of the General Electrics memory test system continues. Final debugging will require a complete, operable memory tube to test the read-out electronics.
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