Accession Number:

AD0767054

Title:

Oxide Charge Trapping Induced by Ion Implantation in SiO2.

Descriptive Note:

Technical rept.,

Corporate Author:

PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB

Personal Author(s):

Report Date:

1973-09-24

Pagination or Media Count:

9.0

Abstract:

Experimental measurements directed at understanding oxide modifications induced by Na and Al ion implantation are described. Both implanted species created high dark conductivity in unannealed specimens. This had a temperature dependence independent of ion type suggesting that the conductivity is related to displacement damage. Internal photoemission studies showed that Na implantation had produced a barrier lowering at both interfaces and also permitted sub-threshold photoemission starting with photons of about 1 eV. Thermal annealing returned the oxide to its insulating state and removed the sub-threshold photoemission. Photodepopulation measurements indicated that the oxide still contained electron traps not present in the unimplanted samples. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE