Accession Number:

AD0766918

Title:

Methods of Measurement for Semiconductor Materials, Process Control, and Devices.

Descriptive Note:

Quarterly rept. 1 Jan-31 Mar 73,

Corporate Author:

NATIONAL BUREAU OF STANDARDS GAITHERSBURG MD

Personal Author(s):

Report Date:

1973-08-01

Pagination or Media Count:

81.0

Abstract:

Significant accomplishments during this reporting period include 1 development of a comprehensive, large-area test pattern for evaluating planar junction structures, 2 completion of experimental work on the evaluation of the destructive, double-bond pull test for wire bonds, 3 initiation of a scanning electron microscope facility, and 4 completion of the investigation of the mechanism of emitter-base junction reverse breakdown during rapid switching of transistors. Work is continuing on measurement of resistivity of semiconductor crystals characterization of generation-recombination-trapping centers in silicon study of gold-doped silicon development of the infrared response technique evaluation of wire bonds and die attachment measurement of thermal properties of semiconductor devices determination of S-parameters, delay time, and related carrier transport properties in junction devices development of a-c probing techniques and characterization of noise and conversion loss of microwave detector diodes. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Test Facilities, Equipment and Methods
  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE