Accession Number:

AD0766853

Title:

Raman Scattering in Narrow-Gap Semiconductors.

Descriptive Note:

Doctoral thesis,

Corporate Author:

PENNSYLVANIA UNIV PHILADELPHIA DEPT OF PHYSICS

Personal Author(s):

Report Date:

1972-01-01

Pagination or Media Count:

193.0

Abstract:

The nature of the Raman scattering process is discussed, as well as the form of the Raman scattering cross-section and the way in which various excitations can contribute to the scattering. The lattice dynamics of the zero-gap semiconductor semi-metal graphite is investigated. A description of the Raman equipment and experimental procedure is also presented. Electric field-induced Raman scattering is introduced and a general background of the two important types of electric field-induced experiments is presented which focusses on paraelectric soft mode behavior and the effects of surface space charge regions. Surface electric field-induced Raman scattering in the cubic IV-VI compound semiconductors PbTe, PbS, PbSe, and SnTe is investigated.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE