Bipolar Voltage Pulse Damage Effects on Transistors.
ARMY MISSILE COMMAND REDSTONE ARSENAL ALA GUIDANCE AND CONTROL DIRECTORATE
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The statistical significance of bipolar or unipolar voltage pulses on transistor junction damage was investigated experimentally. The controlled independent variables of the experiment were pulsed voltage bias sequence, transistor junction tested, and current-limiting series resistance, each with three levels. The dependent variable was the common emitter dc gain measured at 15 volts, 0.5 milliampere. The transistor junction damage induced by the bipolar voltage pulses used in the experiment was not significantly different from the single reverse bias pulse-induced damage. Transistion times between polarities of the bipolar pulses of 1 microsecond prevent general extension of the experimental conclusions. Author
- Electrical and Electronic Equipment