Accession Number:

AD0765833

Title:

Conduction Mechanisms in Thick Film Microcircuits

Descriptive Note:

Semi-annual technical rept. 1 Jan-30 Jun 1973

Corporate Author:

PURDUE RESEARCH FOUNDATION LAFAYETTE IN

Personal Author(s):

Report Date:

1973-08-01

Pagination or Media Count:

56.0

Abstract:

The solubility of RuO2 in 63 PbO-25 B2O3-12 SiO2 glass has been determined as a function of temperature, both for the equilibrium case and for times typically associated with thick film resistor firing. Studies with the hot stage metallograph have demonstrated the feasibility of obtaining quantitative sintering data with this experimental tool, and have shown the release of gas bubbles from resistors for unexpectedly long periods of time at normal firing temperatures. Possible sources of the escaping gas and the implication as regards the sintering model are discussed. Resistor firing studies have demonstrated that the microstructure formation can be successfully slowed by lower temperature operation while still developing the identical ultimate structure. Studies of resistance during the microstructure development process have led to the conclusion that two different charge transport mechanisms may occur during the firing sequence, and that the relative contributions of these two mechanisms depend upon the particle size and particle size distribution of the conductive phase, as well as the degree of dispersion of the formulation.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE